Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 650-652
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
An amorphous silicon field-effect phototransistor is fabricated using a processing technology compatible with conventional amorphous silicon-silicon nitride thin-film transistors. The phototransistor has an offset structure between the source and gate electrodes, where light is absorbed to produce a photocurrent. In an electron accumulation mode, the photocurrent is greater than the dark current by three orders of magnitude. In addition, the phototransistor is found to have output characteristics showing good saturation. Typical photoconductive gain of this saturation current is 17.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.102726
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