ISSN:
1057-9257
Keywords:
Substrates
;
MOVPE
;
MCT
;
Surface morphology
;
Structural properties
;
Photoconductors
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
After a review of the structural properties of (Hg,Cd)Te layers grown by MOVPE on GaAs substrates, topical questions such as out-diffusion of Ga and As from the substrate into the layers, monolithic integration of signal procesing into the substrate and the presence of pyramidal defects in (100) layers will be discussed. In order to solve the last problem, a systematic study of the influence of the (h11) GaAs substrate orientation and polarity on the structrual properties and surface morphology of CdTe layers grown by MOVPE has ben carried out. Twin-free layers are obtained on (211)A, (311)B and (511)B GaAs surface orientations as ezplained by a model taking into accountthe type of dangling bonds at the interface. The performance of photoconductors fabricated on(Hg,Cd)Te layers of various orientations confirms these results. Particularly good results have been obtained for the (311)B orientation.
Additional Material:
8 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/amo.860030134
Permalink
