ISSN:
1432-0630
Keywords:
71.55
;
73.30
;
72.80E
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract This study on deep levels is based on the existence of the transition zone in semiconductor junctions. For each trap we can divide the space charge region into two parts according to whether the trap energy level is above or below a pseudo Fermi level wich depends on experimental conditions; generally, the latter region, called transition zone or edge region, is considered as a weak perturbation. In this paper, we have assembled all possible information given by this particular distribution of charge state. Our analysis gives the necessary background to obtain true interpretation of data with capacitive methods. We show that the analysis of thermal and optical transients gives the energy level, the capture cross section with its activation energy, and the ratio of the two optical cross sections to valence and conduction band. The theoretical results are applied to a detailed study of the “O” level in GaAs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00899721
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