ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The stacking faults (SFs) in the silicon overlayer, which is formed after the implantation of silicon wafers by high doses (2 × 1018 cm−2) of oxygen ions, are studied. During the implantation, a three-dimensional network of SiO2 precipitates is formed along the 〈100〉 directions. Stacking faults appear only after a high-temperature annealing when all the SiO2 precipitates are dissolved. Due to the very low value of the anomalous absorption coefficients of silicon, α-fringe contrast profile calculations are needed for the characterization of SFs. The results show that these SFs are extrinsic in character, bounded by Frank partial dislocations.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01082139
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