ISSN:
1573-7357
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Silicon bolometers obtained by P implantation on single crystal 〈100〉 substrates and compensated with boron in the range 10–50% have been characterized from a technological point of view. Special emphasis was laid on the doping profile of the thermistor, the most critical point of the whole process for an optimal performance of the device as thermal detector. In particular, the effect of post implant anneal on the recovery of the radiation damage and on the modification of the as implanted doping profile is reported. An anomalous enhanced diffusion at 920°C was observed in uncompensated samples. The effect of compensation with B is to reduce the P diffusion, thereby preserving the original as implanted “box” profile almost in haltered. A reproducibility of ±5% of the resistance vs. temperature R(T) characteristic of different bolometers at temperatures below 4.2K has been achieved. This represents an important advancement in the realization of Si bolometers to be used as thermal detectors.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00693442
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