ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The short-range order structure of amorphous silicon prepared by various methods is investigated by electron diffraction analysis. The influence of impurities in the as-prepared films and those irradiated with neon, oxygen, and carbon ions at doses up to 1×1016 cm−2 on the character of structural transformations and the formation of interatomic silicon multiple bonds during annealing are investigated. The structure of films annealed at 500 °C is found to depend on the type of impurities and the nature of their chemical bond with silicon atoms. In particular, oxygen (〉0.2 at. %), unlike hydrogen and carbon, acts as an inhibitor for the formation of silicyne. Good agreement is also noted between the experimentally determined short-range order parameters and those calculated by the nonempirical Hartree-Fock method.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187883
Permalink