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  • 1
    Electronic Resource
    Electronic Resource
    Nachweis von Scilliglaucosidin in den Zwiebeln vonBowiea volubilis Harvey (1956)
    Springer
    Cellular and molecular life sciences 12 (1956), S. 285-286 
    Details
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Hellebrigenin was converted to Scilliglaucosidin-19-ol and 3-Epi-Scilliglaucosidin-19-ol. This proves the correctness of the assumption ofStoll et al. 3 that the aldehydic group of Scilliglaucosidin is in position C-10. Comparison of a reduction product of Nabogenin, a substance isolated earlier from the bulbs ofBowiea volubilis Harvey, with Scilliglaucosidin-19-ol and 3-Epi-Scilliglaucosidin-19-ol showed its identity with the first named compound. This proves that the so called Nabogenin was a mixture consisting mainly of Scilliglaucosidin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02159610
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  • 2
    Electronic Resource
    Electronic Resource
    Global recursive dynamics of articulated tree structures (1999)
    Springer
    Computational mechanics 23 (1999), S. 288-298 
    Details
    ISSN: 1432-0924
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A rigorous global recursive formulation is developed for the dynamics of a classical articulated tree. The system in question is composed of rigid parts interconnected by spring loaded single hinges to form a tree. The global formulation addresses the dynamics of complete branches (subtrees). The external moments applied to the branch are brought to bear on the instantaneous moment of inertia of the branch. Corrections for deviations from rigidity are accumulated recursively from sub-branches. The translational motion is likewise treated by addressing the structure as a whole and accumulating effects of internal motion recursively. Global recursive dynamics is a rigorous reexpression of the equations of motion of the system in terms that are, at the same time, intuitive and directly computable. Applied sequentially, global recursive dynamics gives rise to a family of approximations, progressing from the rigid to the fully articulated, which converge to the solution as the time step tends to zero.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004660050410
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  • 3
    Electronic Resource
    Electronic Resource
    Theory of matching rules for the 3-dimensional Penrose tilings (1988)
    Springer
    Communications in mathematical physics 118 (1988), S. 263-288 
    Details
    ISSN: 1432-0916
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics , Physics
    Notes: Abstract We consider packings of the two Ammann rhombohedra used for tiling the three dimensional space. We define decorations for the facets of the rhombohedra. Using elementary algebraic topology, we prove that any tiling by these rhombohedra with matching decorations is a quasiperiodic Penrose tiling. The proof does not involve any reference to self similarity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01218580
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  • 4
    Electronic Resource
    Electronic Resource
    Chemical and biological studies on the lipopolysaccharide (O-antigen) of Anacystis nidulans (1977)
    Springer
    Archives of microbiology 113 (1977), S. 247-256 
    Details
    ISSN: 1432-072X
    Keywords: Lipopolysaccharide ; O-antigen ; 3- and 4-O-Methyl-D-mannose ; Degraded polysaccharide ; Toxicity ; Anticomplementary activity ; Anacystis nidulans
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract The O-antigen (lipopolysaccharide) of Anacystis nidulans, strain KM, has been isolated from whole cells and from cell wall preparations by phenolwater extraction. The polysaccharide moiety consists of a D-mannose polymer accompanied by smaller amounts of 3- and 4-O-methyl-D-mannoses, D-galactose, D-glucose, L-fucose, D-glucosamine, mannosamine and 2-keto-3-deoxyoctonate. Aldoheptoses are lacking. The degraded polysaccharide is split from lipid A by acid hydrolysis (10% acetic acid, 100°C, 3 h) whereby 2-keto-3-deoxyoctonate is released in small amounts. Degraded polysaccharide forms only one major fraction by Sephadex G-50 gel-filtration. This fraction includes all the sugars mentioned above except L-fucose, which is released during the acetic acid degradation. Periodate studies and methylation analysis revealed that the poly-mannose chain consists of about 75% 1→3 linked and of 25% 1→4 linked D-mannose units. Lipid A of A. nidulans is phosphate-free. The main fatty acid, β-hydroxypalmitic acid, is exclusively amide-bound, presumably to the amino group of D-glucosamine. Other fatty acids, found as minor constituents, are β-hydroxymyristic, palmitic and stearic acids. Lipopolysaccharide of A. nidulans KM exhibits high anticomplementary activity in guineapig serum. It is about 800 times less toxic for adrenalectomized mice than endotoxin from Salmonella typhimurium. The isolated lipopolysaccharide reacts with rabbit antisera against living or heat-killed cells of A. nidulans in passive hemagglutination, when untreated or heated, but not when alkali-treated lipopolysaccharide is used for red blood cell sensibilization. It is concluded that lipopolysaccharide of A. nidulans KM is exposed on the surface of the cell.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00492032
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  • 5
    Electronic Resource
    Electronic Resource
    Hybrid electron cyclotron resonance-radio-frequency plasma etching of III–V semiconductors in Cl2-based discharges. Part I: GaAs and related compounds (1991)
    Springer
    Plasma chemistry and plasma processing 11 (1991), S. 405-422 
    Details
    ISSN: 1572-8986
    Keywords: III–V semiconductors ; ECR ; dry etching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A systematic study has been performed of the dry etching characteristics of GaAs, Al0.3Ga0.7As, and GaSb in chlorine-based electron cyclotron resonance (ECR) discharges. The gas mixtures investigated were CCl2F2/O2, CHCl2F/O2, and PCl3. The etching rates of all three materials increase rapidly with applied RF power, while the addition of the microwave power at moderate levels (150 W) increases the etch rates by 20–80%. In the microwave discharges, the etch rates decrease with increasing pressure, but at 1 m Torr it is possible to obtain usable rates for self-bias voltages ≤ 100 V. Of the Freon-based mixtures, CHCl2F provides the least degradation of optical (photoluminescence) and electrical (diode ideality factors and Schottky barrier heights) properties of GaAs as a result of dry etching. Smooth surface morphologies are obtained on all three materials provided the microwave power is limited to ≤ 200 W. Above this power, there is surface roughening evident with all of the gas mixtures investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01447156
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  • 6
    Electronic Resource
    Electronic Resource
    Hybrid electron cyclotron resonance-radio-frequency plasma etching of III–V semiconductors in Cl2-based discharges. Part II: InP and related compounds (1991)
    Springer
    Plasma chemistry and plasma processing 11 (1991), S. 423-438 
    Details
    ISSN: 1572-8986
    Keywords: III–V semiconductors ; ECR ; dry etching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Electron Cyclotron Resonance (ECR) discharges of CCl2F2 or PCl3 have been used to etch InP, InAs, InSb, InGaAs and AlInAs. The etch rates of these materials increase linearly with additional RF power level applied to the cathode and are in the range 50–180 Å · min−1 for 50 W (DC bias ∼ 308 V), 10 mTorr, 38 CCl2F2/2 O2 plasmas. The etch rates fall rapidly with increasing pressure or increasing O2-to-CCl2F2 ratio. Polymeric surface residues up to 40 Å thick are found on all of these semiconductors when using Freon-based gas mixtures. Etching at practical rates is possible with only 100 V self-bias when using PCl3 discharges, and the addition of microwave excitation under these conditions enhances the etch rates by factors of 2–9. At higher self-biases (300 V) etch rates of 3500–8000 Å · min−1 are possible with PCl3 although the surface morphologies are significantly rougher and the etching less anisotropic than with CCl2F2-based mixtures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01447157
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  • 7
    Electronic Resource
    Electronic Resource
    Dry etching characteristics of III–V semiconductors in microwave BCl3 discharges (1993)
    Springer
    Plasma chemistry and plasma processing 13 (1993), S. 311-332 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; electron cyclotron resonance ; discharges in BCl3 ; additional RF biasing ; selectivities
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Electron cyclotron resonance (ECR) BCl3 discharges with additional rf biasing of the sample position have been used to etch a variety of III–V semiconductors. GaAs and AlxGa1−xAs (x = 0−1) etch at equal rates in BCl3 or BCl3/Ar discharges, whereas SF6 addition produces high selectivities for etching GaAs over AlGaAs. These selectivities are in excess of 600 for dc biases of ≤−150 V, and fall to ≤6 for biases of −300 V. If the dc biases are kept to ≤ − 100 V, there is no measurable degradation of the optical properties of the GaAs and AlGaAs. The AlF3 formed on the AlGaAs surface during exposure to BCl3/SF6 plasmas can be removed by sequential rinsing in dilute NH4OH and water. In-based materials (InP, InAs, InSb, InGaAs) etch at slow rates with relatively rough morphologies in BCl3 plasmas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01466047
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  • 8
    Electronic Resource
    Electronic Resource
    Probability based fracture mechanics for impact penetration damage (1977)
    Springer
    International journal of fracture 13 (1977), S. 409-430 
    Details
    ISSN: 1573-2673
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Description / Table of Contents: Résumé Le mémoire présente une nouvelle méthode pour vérifier la résistance résiduelle de composants structuraux ayant subi un dommage suite à un impact pénétrant. La méthode est basée sur l'application de la fonction de densité de probabilité de Weibull, pour tenir compte de la dispersion appréciable de résistances résiduelles, qui découle de la nature statistique du dommage par impact (fissure, trous et écaillages en surface). Pour mesurer l'étendue d'une configuration d'un dommage par impact, on présente un nouveau paramètre basé sur la solution applicable à une fissure inclinée dans un champ de tension uniaxial, et basé sur un critère de rupture obtenu par voie expérimentale, pour des configurations de fissure de mode mixte. Les résultats des essais sont présentés pour des résistances résiduelles d'éprouvettes endommagées et usinées afin de vérifier la nature statistique qui caractérise un détail d'endommagement extérieur, un trou à paroi lisse et une fissure aigüe. Enfin, des courbes de probabilité de rupture sont fournies pour des panneaux d'aluminium 7075-TG soumis à tension uniaxiale et comportant à la fois un endommagement par usinage et par impact.
    Notes: Abstract This paper presents a new method for assessing the residual strength of structural components which have sustained impact penetration damage. The method is based upon the application of the Weibull probability density function to account for the significant scatter in residual strengths which result from the random nature of impact damage detail (cracks, holes, and spall surfaces). To measure the extent of an impact damage pattern, a new parameter is presented which is based upon the solution for an inclined crack in a uniaxial tension field and an experimentally obtained fracture criterion for mixed mode crack configurations. Test results are presented for residual strengths of machined damage specimens to ascertain the statistical nature which arises from extreme damage detail, smooth holes and sharp cracks. Finally, probability of failure curves are given for both machined (7075-T6) and impact damage (7075-T6 and 2024-T81) in aluminum uniaxial tension panels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00034244
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  • 9
    Electronic Resource
    Electronic Resource
    A special technique for determining the bond strength of micro-fibres in cement matrix by pullout test (1996)
    Springer
    Journal of materials science 15 (1996), S. 1821-1823 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00275353
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  • 10
    Electronic Resource
    Electronic Resource
    Synthesis and biological activity of semisynthetic silicon-containing penicillins and cephalosporins (1980)
    Springer
    Pharmaceutical chemistry journal 14 (1980), S. 710-713 
    Details
    ISSN: 1573-9031
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00765661
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