ISSN:
1572-817X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The dynamical behaviour of Fabry-Perot type semiconductor lasers is modelled, including the relevant many-body Coulomb effects of the excited carriers. Conditions are given under which a parametrization of the full model is possible, allowing simple analytic relations for local gain, refractive index and linewidth enhancement factor. The parameters of the simplified model are uniquely determined by the microscopic theory and have to be optimized for the respective operating conditions. The theory is evaluated for bulk and quantum-well GaAs active material and a variety of laser structures, including strongly and weakly index-guided structures, as well as purely guided single-and twin-stripe lasers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00430557
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