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  • Springer  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    The appearance of spatially nonuniform temperature distributions during rapid thermal processing (1991)
    Springer
    Applied physics 52 (1991), S. 52-59 
    Details
    ISSN: 1432-0630
    Keywords: 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Rapid thermal processing (RTP) of silicon wafers is a promising technique for submicron device structures. Heating is achieved by an intense light-source which allows one to obtain very high temperatures in very short times. Problems arise from temperature gradients. Both experiments and theoretical calculations show that a nonuniform lamp intensity improves the temperature uniformity only in a stationary state when only nonuniform back-reflection of heat radiation by the reflector has to be compensated. This measure, however, causes a dramatic transitory nonuniformity which hampers future applications of RTP especially with larger wafer sizes. The deteriorating influence is demonstrated with shallow junction formation, plastic deformation of the wafer (slip), and aluminum alloying as examples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323684
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Modelling of wafer heating during rapid thermal processing (1990)
    Springer
    Applied physics 50 (1990), S. 141-150 
    Details
    ISSN: 1432-0630
    Keywords: 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A theory of wafer heating during rapid thermal processing is presented. It is demonstrated that temperature uniformity is not only limited by radiation loss at the wafer edge in the stationary state but also influenced by transient effects during temperature ramping. Whereas a compensation of edge losses call for enhanced illumination intensities at the wafer periphery, the avoidance of transient temperature gradients would require uniform illumination. Calculations for various system configurations lead to optimized processing cycles and suggest possible improvements of RTP equipment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00343409
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  • 3
    Electronic Resource
    Electronic Resource
    Kinetics of titanium silicide formation by rapid thermal processing (1989)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 333 (1989), S. 569-575 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Summary Auger electron spectroscopy (depth profiling and line shape analysis), X-ray diffraction, and cross-sectional transmission electron microscopy were employed to investigate the kinetics of titanium silicide formation by rapid thermal annealing in N2 and Ar ambients. A silicide is formed within only a few seconds at 620°–700°C. All the analysis techniques utilized reveal that the silicides primarily consist of sequential TiSi2 and TiSi phases. The TiSi2 is the metastable, poorly-conducting C49 modification. The TiSi2 growth was evaluated quantitatively and was shown to be limited by diffusion of Si through the silicide. For annealing in N2, the TiSi phase is stabilized compared to Ar annealing; additionally a titanium nitride forms near the surface and grows inward by another diffusion-limited process. When the TiSi and TiN reaction fronts approach the available Ti is consumed for these reactions; further silicide growth can only occur via complex phase transformations. The ratio of the activation energies for both diffusion processes was measured to be $$Q_{{\text{TiSi}}_{\text{2}} } /Q_{{\text{TiN}}} = 0.8 \pm 0.2$$ , in approximate agreement with literature data. The role of impurities for silicide growth will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00572378
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  • 4
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    Kinetics of titanium silicide formation by rapid thermal processing (1989)
    Springer
    Details
    Publication Date: 1989-01-01
    Print ISSN: 0016-1152
    Topics: Chemistry and Pharmacology
    Published by Springer
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