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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Materials research innovations 1 (1997), S. 77-84 
    ISSN: 1433-075X
    Keywords: Keywords Microwave processing ; Microwave effect ; Ponderomotive force ; Ionic transport ; Nonthermal ; Sintering
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract  Numerous observations have been reported in the literature of enhanced mass transport and solid-state reaction rates during microwave heating or processing of a variety of ceramic, glass, and polymer materials. These empirical observations of microwave enhancements have been broadly called the ”microwave effect”. In the past, these claims have been the source of significant controversy, due in part to the lack of a credible and verifiable theoretical explanation. Moreover, certain notable microwave heating experiments have failed to observe any resolvable reaction or transport rate enhancements. This paper describes a series of recent experimental and numerical investigations that have established the fact that strong microwave electric fields induce a (previously unknown) nonlinear driving force for (ionic) mass transport near surfaces and structural interfaces (e.g., grain boundaries) in ceramic materials. This driving force can influence reaction kinetics by enhancing mass transport rates in heterogeneous solid-state reactions. Most of the previously reported observations regarding ”microwave effects” (both for and against) are consistent with the characteristics of this newly identified microwave-induced driving force.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Plasma chemistry and plasma processing 16 (1996), S. 141-152 
    ISSN: 1572-8986
    Keywords: Ion implantation ; plasma source ; X-ray characterization
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Plasma source ion implantation (PSII) is a technique for modifying stafaces that places the object to he modified directly into a plasma and then negatively pulse biases the object so as to implant positive ions. If the voltage is high enough, X-rays can he generated by electrons that are also accelerated by the pulse. This work describes techniques for imaging and characterizing the X-rays A pinhole camera was used to image the X-rays being emitted as electrons collided with surfaces in the chamber. The images show that X-rays are generated at the chamber walls and near the target. The time dependence of these X-rays during each pulse was examined using a PIN diode X-ray detector. Then, using another X-ray sensor and pulseheight analyzer, the spectra of the emitted X-rays was determined. The object is to relate the X-ray intensity and spectrum to the temporal and spatial values of the implantation dose so that it may he used as a process monitor and a control sensor.
    Type of Medium: Electronic Resource
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