Electronic Resource
Springer
International journal of infrared and millimeter waves
4 (1983), S. 945-954
ISSN:
1572-9559
Keywords:
Photoconductors
;
Infrared detection
;
Ge:Be
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Ge:Be photoconductors have been developed for low photon background applications in the 30–50 μm wavelength region. These detectors provide higher responsivity and lower noise equivalent power (NEP) than the Ge:Ga detectors currently operating in this wavelength range. Berylliumdoped single crystals were grown by the Czochralski method from a carbon susceptor under a vacuum of ∼ 10−6 torr. We report an optimum detective quantum efficiency of 46% at a background flux of 1.5×108 photons/second (7×10−13 W). Ge:Be detector performance is strongly influenced by the absolute concentrations and the concentration ratio of residual shallow donors and shallow acceptors.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01009319
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