ISSN:
1432-0630
Keywords:
81.40
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Rapid thermal processing (RTP) of silicon wafers is a promising technique for submicron device structures. Heating is achieved by an intense light-source which allows one to obtain very high temperatures in very short times. Problems arise from temperature gradients. Both experiments and theoretical calculations show that a nonuniform lamp intensity improves the temperature uniformity only in a stationary state when only nonuniform back-reflection of heat radiation by the reflector has to be compensated. This measure, however, causes a dramatic transitory nonuniformity which hampers future applications of RTP especially with larger wafer sizes. The deteriorating influence is demonstrated with shallow junction formation, plastic deformation of the wafer (slip), and aluminum alloying as examples.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00323684
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