ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles  (3)
  • 71.55.Fr  (2)
  • 73  (1)
  • Springer  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Hf-sputtered indium oxide films doped with tin (1978)
    Springer
    Applied physics 16 (1978), S. 239-246 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 73
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Indium oxide films doped with tin (ITO-films) have been hf-sputtered from an 80 at-%In2O3/20 at-%SnO2 target onto glass substrates. The sputter atmosphere contained mainly argon (10−2Torr) with addition of oxygen (0≦p O 2≦2·10−2Torr). The sputtered films aren-conductors. The conductivity and density of charge carriers depend on the oxygen content of the sputter gas. They could be varied by two orders of magnitude. In air or in oxygen atmosphere the films oxidize at the surface and for a certain depth beneath the surface, thus decreasing the conductivity. The Hall mobility of the sputtered films is smaller (≈10 cm2V−1 s−1) than one observes at ITO films produced by CVD sparaying or other methods. The conductivity of as sputtered films approached maximum values of about 1000Ώ−1cm−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885119
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Differential evaluation of the Hall effect in silicon with oxygen-related donors (1984)
    Springer
    Applied physics 33 (1984), S. 47-50 
    Details
    ISSN: 1432-0630
    Keywords: 71.55.Fr ; 72.80.Cw
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The free-electron concentration as a function of the temperature is analyzed differentially for silicon with oxygen-related donors formed by annealing at 430 °C. The analysis yields defect levels atE c−0.25 eV,E c−0.14eV, andE c−0.055 eV assuming the degeneracy factors to be unity. The corresponding defect level concentrations are approximately proportional to the annealing time. Their formation rates are between 1 and 3×1010cm−3s−1 at 430 °C annealing temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01197085
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Charge carrier statistics of semiconductors containing defects with negative electronic correlation energy (1982)
    Springer
    Applied physics 27 (1982), S. 39-47 
    Details
    ISSN: 1432-0630
    Keywords: 71.55.Fr ; 72.80.Cw ; 71.45.Gm
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The free charge carrier concentration as a function of the reciprocal temperature and the doping level [p(1/T)- andp(C)-characteristics] is calculated from the neutrality equation of a semiconductor containing positive or negativeU centers. The typical exponential laws and power laws of thep(1/T)- andp(C)-characteristics are given both for positive and negative correlation energy of the bound charge carrier pairs. Furthermore, the characteristics are evaluated differentially, in order to obtain criteria for the presence of negativeU centers in semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01197545
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...