ISSN:
1432-0630
Keywords:
78.30.Hv
;
63.20. — e
;
81.15.Gh
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Raman spectra have been investigated in PbTiO3 thin films grown on Si by metalorganic chemical vapor deposition. A large grazing-angle scattering technique was taken to measure the temperature dependence of Raman spectra below room temperature. All Raman modes in the thin films are assigned and compared with those in the bulk single crystal, a newA 1(TO) soft mode at 104 cm−1 was recorded which satisfies the Curie-Weiss relationω 2 =A(T c −T). Intensities of theA 1(1TO) andE(1TO) modes were anomalously strengthened with increasing temperature. Raman modes for the thin films exhibit remarkable frequency downshift and upshift which is related to the effect of internal stress.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01575095
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