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  • 63.20. — e  (1)
  • 78.30.-j  (1)
  • Springer  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 60 (1995), S. 317-320 
    ISSN: 1432-0630
    Keywords: 78.30.-j ; 63.20.-e
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract E(TO)-mode properties in LiTaO3:Nd crystal were examined by analyzing the Raman spectra measured.E(TO) modes appear in the transverseA 1 spectrum. Their intensities obviously increase in theE andE+A 1 mixed-symmetry spectra but decrease in theE spectrum which shows new vibrational modes. In particular, in the transverse-E spectrum of y(xz) $$\bar y$$ geometry, the properties ofE(TO) modes are similar to those of pure LiTaO3 of the same geometry, whereas in the transverse-E spectrum in x(yz) $$\bar x$$ geometry these modes are turned intoA 1 (TO) modes. We attribute these properties to both the surface strain produced by mechanical polishing of the sample and the microstructural change of the LiTaO3 crystal resulting from Nd doping.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0630
    Keywords: 78.30.Hv ; 63.20. — e ; 81.15.Gh
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Raman spectra have been investigated in PbTiO3 thin films grown on Si by metalorganic chemical vapor deposition. A large grazing-angle scattering technique was taken to measure the temperature dependence of Raman spectra below room temperature. All Raman modes in the thin films are assigned and compared with those in the bulk single crystal, a newA 1(TO) soft mode at 104 cm−1 was recorded which satisfies the Curie-Weiss relationω 2 =A(T c −T). Intensities of theA 1(1TO) andE(1TO) modes were anomalously strengthened with increasing temperature. Raman modes for the thin films exhibit remarkable frequency downshift and upshift which is related to the effect of internal stress.
    Type of Medium: Electronic Resource
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