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  • 63.20. — e  (1)
  • 78.30.-j  (1)
  • Auger analysis  (1)
  • Springer  (3)
  • 1
    Electronic Resource
    Electronic Resource
    E(transverse optical)-mode properties in the LiTaO3: Nd crystal at room temperature (1995)
    Springer
    Applied physics 60 (1995), S. 317-320 
    Details
    ISSN: 1432-0630
    Keywords: 78.30.-j ; 63.20.-e
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract E(TO)-mode properties in LiTaO3:Nd crystal were examined by analyzing the Raman spectra measured.E(TO) modes appear in the transverseA 1 spectrum. Their intensities obviously increase in theE andE+A 1 mixed-symmetry spectra but decrease in theE spectrum which shows new vibrational modes. In particular, in the transverse-E spectrum of y(xz) $$\bar y$$ geometry, the properties ofE(TO) modes are similar to those of pure LiTaO3 of the same geometry, whereas in the transverse-E spectrum in x(yz) $$\bar x$$ geometry these modes are turned intoA 1 (TO) modes. We attribute these properties to both the surface strain produced by mechanical polishing of the sample and the microstructural change of the LiTaO3 crystal resulting from Nd doping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538411
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  • 2
    Electronic Resource
    Electronic Resource
    Raman-spectroscopy study of PbTiO3 thin films grown on Si substrates by metalorganic chemical vapor deposition (1996)
    Springer
    Applied physics 62 (1996), S. 281-284 
    Details
    ISSN: 1432-0630
    Keywords: 78.30.Hv ; 63.20. — e ; 81.15.Gh
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Raman spectra have been investigated in PbTiO3 thin films grown on Si by metalorganic chemical vapor deposition. A large grazing-angle scattering technique was taken to measure the temperature dependence of Raman spectra below room temperature. All Raman modes in the thin films are assigned and compared with those in the bulk single crystal, a newA 1(TO) soft mode at 104 cm−1 was recorded which satisfies the Curie-Weiss relationω 2 =A(T c −T). Intensities of theA 1(1TO) andE(1TO) modes were anomalously strengthened with increasing temperature. Raman modes for the thin films exhibit remarkable frequency downshift and upshift which is related to the effect of internal stress.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01575095
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  • 3
    Electronic Resource
    Electronic Resource
    Oxidation of single-phase Pb-In alloys (1990)
    Springer
    Oxidation of metals 33 (1990), S. 301-308 
    Details
    ISSN: 1573-4889
    Keywords: Pb-In alloys ; oxidation ; oxide-inversion layer ; Auger analysis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The oxidation of several single-phase Pb-In alloys has been studied in air at room temperature using AES (Auger electron spectroscopy) combined with sputter-depth profiling. Alloy samples with indium composition between 3 and 64 at.% In, which were prepared using a microtome, were oxidized in air. The oxidation of alloys with low In contents was found to be the same as that of Pb-2.9 at.% Sn.1 Increasing the bulk composition of In increased the ratio of oxidized In to oxidized Pb in the oxide mixture, although Pb oxide was observed even on the surface of the oxide for samples up to 64 at.% In. The oxidation behavior of Pb-In alloys can be explained in terms of preferential oxidation of In due to its much greater affinity for oxygen than Pb.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00667419
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