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  • 61.70  (1)
  • Semiconductors II: surfaces, interfaces, microstructures, and related topics
  • Springer  (1)
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    Electronic Resource
    Electronic Resource
    The determination of dislocation density depth profiles in surface layers from broadening of X-ray diffraction profiles (1990)
    Springer
    Applied physics 50 (1990), S. 107-109 
    Details
    ISSN: 1432-0630
    Keywords: 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A method is proposed for the determination of dislocation density depth profiles in the thin surface layers comparable to the penetration depth of X-rays, with no need to remove the surface layers by chemical or electrolytic polishing. The dislocation density depth profile is modelled mathematically and the parameters determining the profile can be evaluated from the Fourier transform of the X-ray diffracted profiles with various wavelengths of radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323960
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