ISSN:
1432-0630
Keywords:
79.20.Ds
;
81.60.-j
;
82.65.Nz
;
61.80.-x
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Intense pulsed-laser irradiation in a suitable chemical atmosphere can produce a significant incorporation of chemical species from the environment to the surface molten layer. This process has been used to produce p-n junctions in silicon and GaAs irradiated, respectively, in PCl3 and SiH4 atmospheres. A modelling of the incorporation process, taking into account the solid-liquid-solid transition of the surface layer, has been developed following both a numerical and a semi-analytical approach. The modelling of the doping process gives results in a reasonably good agreement with the experimental doping profiles, obtained by irradiating Si samples in PCl3 atmosphere.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00617938
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