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Sulphur-doped silicon background-limited infrared photodetectors near 77 K (1976)

Migliorato, P. ; Vere, A. W. ; Elliott, C. T.

Springer

Applied physics 11 (1976), S. 295-297

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ISSN: 1432-0630

Keywords: 85.60 ; 72.40

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract The photoconductive properties of sulphur-doped extrinsic silicon infrared detectors prepared by closed-tube diffusion techniques have been investigated. Spectral response data show that this material would be suitable for thermal imaging of 3–5 μm radiation, whilst detectivity measurements as a function of temperature indicate that background-limited operation is achievable near liquid nitrogen temperature (77 K).

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00897069

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