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  • PACS: 07.60; 68.55; 78.65  (1)
  • Rh/TiO2 catalysts  (1)
  • alkalis  (1)
  • Springer  (3)
  • Nature Publishing Group
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  • Springer  (3)
  • Nature Publishing Group
Years
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Catalysis letters 68 (2000), S. 191-196 
    ISSN: 1572-879X
    Keywords: oxidative coupling of methane ; OCM ; silica phase transition ; alkalis ; ethylene selectivity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract During calcination of OCM catalyst precursors, Li...Cs spectacularly lower the amorphous silica → α-cristobalite phase transition temperature, shown here to be a critically important requirement for production of effective catalysts. Incorporation of W switches on OCM activity and newly discovered K/W and Rb/W formulations exhibit unsurpassed ethylene selectivity at high methane conversion. Addition of Mn significantly improves the performance of the former. An alkali-stabilised tungsten oxo species is thought to be the OCM active site.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Catalysis letters 8 (1991), S. 37-43 
    ISSN: 1572-879X
    Keywords: Olefins polymerization ; Rh/TiO2 catalysts ; titania ; rhodium
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The adsorption of ethene and propene on titania and titania-supported rhodium has been studied, observing a continuous adsorption even after 24 h. The samples have been reduced at 623 or 773 K, but no difference was observed, whichever the reduction temperature or the presence of rhodium, on the amount of gas adsorbed per unit of surface area of the solid. A study of the polymerization has been done following the “equal reactivity hypothesis”, and it has been concluded that the role played by the rhodium particles is to facilitate adsorption of the gaseous molecule, that is then transfered to the surface of the support, where it polymerizes.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1432-0630
    Keywords: PACS: 07.60; 68.55; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The recrystallization kinetics of BF |lefbop| + |clobop||opnbop| 2 |clobop| ion-implanted silicon has been studied by means of spectroscopic ellipsometry. It has been found that the dielectric constant of the implanted layers depends on the energy dose and ion-beam current. The activation energy of the regrowth process increases with ion peak concentration becoming saturated for the largest implanted doses. In the largest-dose samples implanted at low current a significant decrease of the regrowth rate was detected when the recrystallization front crosses the peak of the impurity distribution.
    Type of Medium: Electronic Resource
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