ISSN:
1432-0630
Keywords:
07.60
;
68.55
;
78.65
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The recrystallization kinetics of BF 2 + ion-implanted silicon has been studied by means of spectroscopic ellipsometry. It has been found that the dielectric constant of the implanted layers depends on the energy, dose and ion-beam current. The activation energy of the regrowth process increases with ion peak concentration becoming saturated for the largest implanted doses. In the largest-dose samples implanted at low current a significant decrease of the regrowth rate was detected when the recrystallization front crosses the peak of the impurity distribution.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01538413
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