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  • 1
    Publication Date: 2019
    Description: This study aims to investigate the prediction of critical buckling load of steel columns using two hybrid Artificial Intelligence (AI) models such as Adaptive Neuro-Fuzzy Inference System optimized by Genetic Algorithm (ANFIS-GA) and Adaptive Neuro-Fuzzy Inference System optimized by Particle Swarm Optimization (ANFIS-PSO). For this purpose, a total number of 57 experimental buckling tests of novel high strength steel Y-section columns were collected from the available literature to generate the dataset for training and validating the two proposed AI models. Quality assessment criteria such as coefficient of determination (R2), Mean Absolute Error (MAE) and Root Mean Squared Error (RMSE) were used to validate and evaluate the performance of the prediction models. Results showed that both ANFIS-GA and ANFIS-PSO had a strong ability in predicting the buckling load of steel columns, but ANFIS-PSO (R2 = 0.929, RMSE = 60.522 and MAE = 44.044) was slightly better than ANFIS-GA (R2 = 0.916, RMSE = 65.371 and MAE = 48.588). The two models were also robust even with the presence of input variability, as investigated via Monte Carlo simulations. This study showed that the hybrid AI techniques could help constructing an efficient numerical tool for buckling analysis.
    Electronic ISSN: 1996-1944
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by MDPI
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  • 2
    Publication Date: 2019
    Description: We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The intrinsic a-Si:H layer was optimized by hydrogen dilution and its structural and electrical characteristics were investigated. The a-Si:H layer in the transition region between a-Si:H and µc-Si:H resulted in superior device characteristics. Using a-Si:H passivation layer, the field-effect mobility of the LTPS TFT was increased by 78.4% compared with conventional LTPS TFT. Moreover, the leakage current measured at VGS of 5 V was suppressed because the defect sites at the poly-Si grain boundaries were well passivated. Our passivation layer, which allows thorough control of the crystallinity and passivation-quality, should be considered as a candidate for high performance LTPS TFTs.
    Electronic ISSN: 1996-1944
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by MDPI
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