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  • International Union of Crystallography (IUCr)  (3)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 53 (1997), S. 168-174 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: In this work, the effects of the elastic relaxation of compositional stresses caused by the finite size of transmission electron microscopy (TEM) specimens on the image contrast of high-resolution transmission electron microscopy (HRTEM) micrographs of strained heterostructures made by cubic materials are investigated. The reduced spatial dimensions, owing to the thinning process of strained heterostructures, cause modification of the atomic positions in the thinned specimens with respect to the bulk ones. This deformation is a function not only of the specimen thickness but also of the thinning crystallographic direction. The results show that the strains of an elastically relaxed structure can vary by 15% as a function of the thinning direction ([100] or [011]). The bending of the atomic columns caused by the elastic relaxation phenomena in HRTEM specimens of strained semiconductor materials can cause a strong background-intensity variation in the HRTEM images. This effect is a function of the structure of the investigated materials, indicating that information on the background intensity variation, owing to the non-uniform lattice distortion of an elastically relaxed heterostructure made by cubic materials, is contained in the {200} beams. Thus, the influence of the elastic relaxation cannot be neglected whenever HRTEM is used to deduce the local chemical composition or the local unit cell in strained cubic materials.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 29 (1996), S. 230-235 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: This work proposes a new four-crystal monochromator particularly indicated for applications in the field of high-resolution X-ray diffraction. The monochromator is made of two monolithic crystal elements. The first one is a channel-cut crystal consisting of two symmetrically cut components set in a parallel nondispersive geometry. The second monolithic crystal is composed of two crystal components in a parallel nondispersive geometry but the crystal surfaces are miscut with respect to the diffraction planes. The diffraction geometry for both components of the second monochromator crystal element is the glancing-incidence condition. The peculiar properties of this monochromator are investigated theoretically. An appropriate rotation of the second component of the second monolithic block with respect to the first components corrects the beam deviation caused by the refraction effect. This monochromator system may allow one to obtain highly monochromated and collimated beams with high angular resolution (about 0.01 mrad) and wavelength dispersion of about 4 × 10−5. The intensity reduction of the proposed crystal arrangement in comparison with other monochromators is discussed, including wavelength spread and beam size increase.
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  • 3
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 31 (1998), S. 831-834 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: In this paper, we derive the most general expression of the X-ray incidence parameter. The new expression of the incidence parameter allows us to determine the lattice deformation of strained epitaxic films of materials of orthorhombic symmetry by high-resolution X-ray diffraction. The strain status of epilayers can be evaluated by using layer and substrate peaks of different reflections. In particular, the lattice mismatch (strain fields) between substrate and epilayers can be determined even if the heterostructure is made of materials of different crystallographic symmetry, e.g. high-Tc perov-skite superconductor thin films deposited on SrTiO3. In addition, the new expression of the incidence parameter takes into account the most general uniform lattice deformation of the epilayer crystal unit cell. Furthermore, it should be noted that the new expression is particularly useful if the angular separation Δθ between layer and substrate Bragg peaks is so large that the more conventional first- or second-order approximations in Δθ of the incidence parameter are not valid.
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