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  • International Union of Crystallography (IUCr)  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Elimination of extrinsic components overlapping lattice distortion variations of a silicon single crystal obtained by double-crystal X-ray topography (2000)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 33 (2000), S. 226-233 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Variations in lattice plane spacing and lattice plane orientation, i.e. Δd/d and Δα, reflect variations in lattice distortion in a single crystal. Double-crystal X-ray topography (DCT) using synchrotron radiation can be used to measure Δd/d and Δα of a silicon single crystal. However, both Δd/d and Δα measured using DCT are always overlapped by extrinsic components, showing particular long-range variations. The extrinsic components should be eliminated from the measured Δd/d and Δα for quantitative characterization of silicon single crystals. A sample-rotation and area-detector-traverse (RT) method, applicable to X-ray optics for DCT, has been newly developed. The extrinsic components are eliminated by modification of the intensity distribution on the X-ray topographs using the RT method. From theoretical considerations, it is confirmed that the extrinsic components are mainly due to the (+,−) non-parallel setting between the monochromator and the collimator, and a minute bend in the sample due to its physical restraint.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889899015484
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray study of small dislocation loops in thermally oxidized silicon (1972)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 5 (1972), S. 281-285 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Lattice defects in thermally oxidized silicon waters have been investigated by X-ray transmission topography. Many dotted lattice defect images were observed in the X-ray topographs. From observation of the variation in the image contrast between reflecting planes, it was found that these defects have a principal displacement along one of the 〈111〉 directions and another small displacement component perpendicular to this direction. The surfaces of the specimens were chemically etched in Sirtl solution after X-ray topography. Etch hillocks were found to be loops and half loops in the optical micrographs. One-to-one correspondence was found to exist between the etch hillocks and the X-ray images of defects. It was concluded that the defects are small dislocation loops and half loops lying on one of {111} planes and having a Burgers vector a/3 〈111〉 normal to the plane. The shapes and the contrasts of Observed X-ray images were well explained by the displacement around a partial dislocation of edge type.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889872009513
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    Paper (German National Licenses)
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