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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 61 (1995), S. 377-380 
    ISSN: 1432-0630
    Keywords: 68.35 ; 68.45 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The capacitance and voltage characteristics of field effect transistors passivated by BaF2-B2O3-GeO2-SiO2 glasses with various water contents were investigated. As the OH absorption coefficients of the glass increased, adverse effects on the recovery of hysteresisC-V curve shifts was seen. The water content is related to the fluoride content of the BaF2−B2O3−GeO2−SiO2 glass. The viscous flow point of the glass was lowered with increasing ionic character obtained from Hannay's equation. The source-drain current and voltage (I-V) characteristics of typical enhancement and depletion mode field effect transistors passivated with these glasses were investigated.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 62 (1996), S. 61-63 
    ISSN: 1432-0630
    Keywords: 68.35 ; 68.45 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The capacitance and voltage (C-V) characteristics of Metal-Oxide-silicon (MOS) capacitors passivated by CaF2B2O3-GeO2-SiO2 glasses with OH− ions, water and fluoride contents were investigated. As the OH− absorption coefficients of the glass increased, adverse effects on the recovery of hysteresis C-V curve shifts was observed. The content of OH− ions is closely related to the fluoride content in the CaF2 B2O3-GeO2-SiO2 glass. The viscous-flow point of the glass was lowered with increasing degree of ionic character obtained from Hannay's equation.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 62 (1996), S. 313-315 
    ISSN: 1432-0630
    Keywords: 68.35 ; 68.45 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The capacitance and voltage (C-V) characteristics of metal, oxide, and semiconductors (MOS) capacitors passivated by SrF2-B2O3-GeO2-SiO2 glasses with various water and fluoride contents were investigated. As the OH− absorption coefficient of a glass increased, adverse effects on the recovery of shifts of the hysteresisC-V curve have been observed. The water content of ions is closely related to the fluoride content in the SrF2-B2O3-GeO2-SiO2 glass. The viscous-flow transition point of glass was lowered with increasing degree of ionic character obtained from Hannay's equation.
    Type of Medium: Electronic Resource
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