ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this paper, a newly developed ultra-fine abrasive polishing pad by gel technology wasadopted to polish silicon wafer on a nano-polishing machine. In order to evaluate the machiningperformances of the polishing pad, the influences of abrasive sizes, abrasive concentration andpolishing parameters (pressure, rotating speed and machining time) on the silicon wafer wereinvestigated respectively. Optical microscope and ZYGO 3D surface analyzer were applied toexamine the surface morphologies and surface roughness of the polished silicon wafer respectively.The experimental results showed that the surface roughness of silicon wafer decreased with thedecreasing of abrasive grits and the increasing of abrasive concentration and polishing parameters(pressure, rotating speed and polishing time) when polishing silicon wafer with the polishing padcontaining Al2O3 abrasive. When abrasive concentration, polishing pressure and polishing timereached certain values, few changes would happen for the silicon wafer
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/55/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.359-360.279.pdf
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