ISSN:
1090-6487
Keywords:
72.40.+w
;
73.20.Jc
;
61.72.Ss
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The impurity photoconductivity spectra of uncompensated silicon at liquid-helium temperatures under conditions of strongly suppressed background radiation (background) are studied in different electric fields E. It is established that the delocalization arising in the D − band as E increases is not associated with any changes of the fluctuation potential and is due to the direct action of the field E. A delocalization band of finite width appears abruptly at a critical value E c (∼100 V/cm) of E. The critical field E c increases with the density of charged centers in the sample.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.567319
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