Publication Date:
1998-01-01
Description:
Using the finite element method, we investigate device applications of lateral resonant tunneling structures which consist of a transmission channel with attached resonators. Such structure exhibits resonance-antiresonance transmission features which may be engineered to achieve desired device properties. We show that the valley current can be reduced in such 2D lateral resonant tunneling devices, resulting in an improved current peak-to-valley ratio.
Print ISSN:
1065-514X
Electronic ISSN:
1563-5171
Topics:
Electrical Engineering, Measurement and Control Technology
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