Publication Date:
2019-08-28
Description:
Experimental characteristics of monolithic InAlAs/InGaAs HEMT mixers are presented together with a theoretical analysis. Experiments at W-band show a maximum conversion gain of 0.9 dB with 2 dBm of LO power level. This is the first demonstration of a monolithic HEMT mixer with conversion gain at W-band. The conversion gain dependence on LO power, RF frequency and gate bias is measured and compared with the theoretical predictions. Good agreement between the theory and experiment could be found.
Keywords:
ELECTRONICS AND ELECTRICAL ENGINEERING
Type:
IEEE Transactions on Microwave Theory and Techniques (ISSN 0018-9480); 41; 1; p. 1-8.
Format:
text
Permalink