ISSN:
1090-6487
Keywords:
63.20.Dj
;
78.30.Fs
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Lateral localization of phonons in GaAs islands formed on the (100) surface under conditions of (2 × 4) structural reconstruction is detected by means of Raman scattering. The triplet structure of the peak corresponding to laterally localized phonons is detected in the Raman scattering spectra of a GaAs0.6/AlAs5 sublattice grown by molecular-beam epitaxy. The distribution of islands over different configurations is determined by comparing the theoretical Raman scattering spectra, calculated in the Vol’kenshte $$\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} $$ n bond polarizability approximation, with the experimental spectra. The atomic configuration of the islands is identical to the results obtained previously by scanning tunneling microscopy. According to the calculation, 70% of the islands contain fewer than 18 Ga atoms, and lateral localization occurs with AlAs barrier thickness of 2 or more monolayers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.568133
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