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  • 1
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    Shear Failure of Anistropic Rocks (1960)
    Cambridge University Press
    Details
    Publication Date: 1960-02-01
    Description: The two-dimensional theory of two simple generalizations of the Coulomb-Navier criterion for shear failure is developed. The first of these refers to a material with a single plane of weakness which has a different shear strength and coefficient of internal friction from the remainder of the material. In this case it is shown that failure may take place, according to circumstances, either in the plane of weakness or in planes cutting across it. The second criterion refers to a layered material whose shear strength varies continuously from a maximum in one direction to a minimum in the perpendicular direction. In this case it appears that, instead of the two directions of failure possible for an isotropic material, there is only one possible plane of failure which lies between the plane of minimum shear strength and the nearest to it of the two Coulomb-Navier planes. Numerical results are given for the case of uniaxial compression and experimental results are shown to be in reasonable agreement with them.
    Print ISSN: 0016-7568
    Electronic ISSN: 1469-5081
    Topics: Geosciences
    Published by Cambridge University Press
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  • 2
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    2D-Hydrodynamic Energy Model Including Avalanche Breakdown Phenomenon for Power Field Effect Transistors (2001)
    Hindawi
    Details
    Publication Date: 2001-01-01
    Description: A 2D-Hydrodynamic model is carried out to predict the breakdown voltage of microwave field effect transistors. The model is based on the conservation equations inferred from Boltzmann's transport equation, coupled with Poisson’s equation. In order to take into account the channel avalanche breakdown, the charge conservation equations for electrons and holes are considered and a generation term is introduced. The set of equations is solved using finite difference and different computational methods have been tested to save computing time. The model allows us to obtain accurate predictions for power transistors considering a usual gate recess. Results are performed for pseudomorphic ALGaAs/InGaAs/GaAs HEMTs.
    Print ISSN: 1065-514X
    Electronic ISSN: 1563-5171
    Topics: Electrical Engineering, Measurement and Control Technology
    Published by Hindawi
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