Publication Date:
2011-08-18
Description:
Author(s): X. Y. Peng, Q. Zhang, B. Shen, J. R. Shi, C. M. Yin, X. W. He, F. J. Xu, X. Q. Wang, N. Tang, C. Y. Jiang, Y. H. Chen, and K. Chang An anomalous linear photogalvanic effect (LPGE) in Al x Ga 1− x N/GaN heterostructures under infrared irradiation has been observed. This effect exhibits a similar dependence as the ordinary LPGE on the laser polarization state but is closely related to the inhomogeneity of the laser intensity. This effe... [Phys. Rev. B 84, 075341] Published Wed Aug 17, 2011
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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