Publication Date:
2017-07-12
Description:
Author(s): Y. Fujita, M. Yamada, M. Tsukahara, T. Oka, S. Yamada, T. Kanashima, K. Sawano, and K. Hamaya Germanium is eyed as a channel material in next-generation CMOS transistors. By developing high-quality contacts between Ge and a highly spin-polarized Heusler alloy in a spin valve, the authors demonstrate electrical spin injection, transport, manipulation, and detection up to 250 K, with pure spin-current transport observable at r o o m t e m p e r a t u r e . The spin-relaxation mechanism in Ge near room temperature is found to be dominated by a phonon-induced intervalley spin-flip process. [Phys. Rev. Applied 8, 014007] Published Mon Jul 10, 2017
Electronic ISSN:
2331-7019
Topics:
Physics
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