Publication Date:
2017-03-07
Description:
Author(s): M. Ishikawa, T. Oka, Y. Fujita, H. Sugiyama, Y. Saito, and K. Hamaya We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon ( n + − Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, … [Phys. Rev. B 95, 115302] Published Fri Mar 03, 2017
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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