Publication Date:
2011-09-22
Description:
Author(s): H. Okabe, N. Takeshita, M. Isobe, E. Takayama-Muromachi, T. Muranaka, and J. Akimitsu Electronic transport properties in the spin-orbit Mott insulator Ba 2 IrO 4 were studied under high pressure ( P ), up to 15 GPa. Resistivity measurements revealed a metal-insulator (M-I) transition at 13.8 GPa in Ba 2 IrO 4 . In the insulating state ( P 〈13.8 GPa), the resistivity well follows the variable... [Phys. Rev. B 84, 115127] Published Wed Sep 21, 2011
Keywords:
Electronic structure and strongly correlated systems
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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