Publication Date:
2015-10-14
Description:
Author(s): R. Mainz, H. Rodriguez-Alvarez, M. Klaus, D. Thomas, J. Lauche, A. Weber, M. D. Heinemann, S. Brunken, D. Greiner, C. A. Kaufmann, T. Unold, H.-W. Schock, and C. Genzel In polycrystalline compound semiconductor thin films, structural defects such as grain boundaries as well as lateral stress can form during film growth, which may deteriorate their electronic performance and mechanical stability. In Cu-based chalcogenide semiconductors such as Cu ( In , Ga ) Se 2 or Cu 2 ZnS… [Phys. Rev. B 92, 155310] Published Mon Oct 12, 2015
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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