Publikationsdatum:
2013-11-28
Beschreibung:
Author(s): Paul Pahner, Hans Kleemann, Lorenzo Burtone, Max L. Tietze, Janine Fischer, Karl Leo, and Björn Lüssem We study doping properties and charge carrier trap distributions in pentacene Schottky diodes doped by the fluorinated fullerene derivate C 60 F 36 and 2,2'-(perdiylidene)dimalononitrile (F 6 -TCNNQ) upon small signal excitation. We show that the charge carrier depletion zones present in these Schottky d... [Phys. Rev. B 88, 195205] Published Wed Nov 27, 2013
Schlagwort(e):
Semiconductors I: bulk
Print ISSN:
1098-0121
Digitale ISSN:
1095-3795
Thema:
Physik
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