Publication Date:
2018-05-03
Description:
Author(s): Archana Tankasala, Joseph Salfi, Juanita Bocquel, Benoit Voisin, Muhammad Usman, Gerhard Klimeck, Michelle Y. Simmons, Lloyd C. L. Hollenberg, Sven Rogge, and Rajib Rahman Two-electron states bound to donors in silicon are important for both two-qubit gates and spin readout. We present a full configuration interaction technique in the atomistic tight-binding basis to capture multielectron exchange and correlation effects taking into account the full band structure of ... [Phys. Rev. B 97, 195301] Published Wed May 02, 2018
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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