Publication Date:
2013-12-11
Description:
Author(s): C. Edmunds, L. Tang, M. Cervantes, M. Shirazi-HD, J. Shao, A. Grier, A. Valavanis, J. D. Cooper, D. Li, G. Gardner, D. N. Zakharov, Z. Ikonić, D. Indjin, P. Harrison, M. J. Manfra, and O. Malis We report a systematic and quantitative study of near-infrared intersubband absorption in strained AlGaN/GaN and lattice-matched AlInN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without δ doping. For AlGaN/GaN, we obtained good theor... [Phys. Rev. B 88, 235306] Published Tue Dec 10, 2013
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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