Publication Date:
2011-08-10
Description:
Author(s): Nate Miller, Eugene E. Haller, Gregor Koblmüller, Chad Gallinat, James S. Speck, William J. Schaff, Michael E. Hawkridge, Kin Man Yu, and Joel W. Ager, III Temperature-dependent thermopower and Hall-effect measurements, combined with model calculations including all of the relevant elastic- and inelastic-scattering mechanisms, are used to quantify the role of charged line defects on electron transport in n -type InN films grown by molecular-beam epitaxy... [Phys. Rev. B 84, 075315] Published Tue Aug 09, 2011
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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