Publikationsdatum:
2012-05-12
Beschreibung:
Author(s): Wayne M. Witzel, Rajib Rahman, and Malcolm S. Carroll We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on 73 Ge in the barrier layer to evaluate the importance of Ge as well as Si enrichment for long decoherence times. We use atomistic tight-... [Phys. Rev. B 85, 205312] Published Fri May 11, 2012
Schlagwort(e):
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Digitale ISSN:
1095-3795
Thema:
Physik
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