Publication Date:
2017-07-01
Description:
Author(s): G. T. Lin, H. L. Zhuang, X. Luo, B. J. Liu, F. C. Chen, J. Yan, Y. Sun, J. Zhou, W. J. Lu, P. Tong, Z. G. Sheng, Z. Qu, W. H. Song, X. B. Zhu, and Y. P. Sun CrGeTe 3 recently emerges as a new two-dimensional (2D) ferromagnetic semiconductor that is promising for spintronic device applications. Unlike CrSiTe 3 whose magnetism can be understood using the 2D-Ising model, CrGeTe 3 exhibits a smaller van der Waals gap and larger cleavage energy, which could lea... [Phys. Rev. B 95, 245212] Published Fri Jun 30, 2017
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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