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Nanolithography with metastabile helium (1996)

Nowak, S. ; Pfau, T. ; Mlynek, J.

Springer

Applied physics 63 (1996), S. 203-205

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ISSN: 1432-0649

Keywords: 41.80.-y

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract We have used a self-assembling monolayer of dodecanethiole molecules as the resist for a lithography technique based on a beam of metastable helium atoms. Doses as low as 3 metastable helium atoms per 10 molecules are enough to write patterns into this resist. An edge resolution of 30 nanometers is demonstrated. The writing mechanism is based on the damage of the resist due to Penning ionization.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF01095274

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