Publication Date:
2015-09-29
Description:
Author(s): M. Remeika, J. R. Leonard, C. J. Dorow, M. M. Fogler, L. V. Butov, M. Hanson, and A. C. Gossard The authors demonstrate a means to determine the strength of excitonic correlations (as measured by the photoluminescence energy shift) of indirect excitons in semiconductor quantum wells. Because this energy shift is determined by how the excitons respond to an external potential, the authors apply an electrostatic periodic potential to the excitonic gas. By measuring the corresponding excitonic response due to this applied potential, they, using a complementary theory, are able to deduce the strength of correlations. [Phys. Rev. B 92, 115311] Published Mon Sep 28, 2015
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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