Publikationsdatum:
2016-04-05
Beschreibung:
Author(s): N. Dotti, E. Heintze, M. Slota, R. Hübner, F. Wang, J. Nuss, M. Dressel, and L. Bogani We investigate the conduction mechanisms of nitronyl-nitroxide (NIT) molecular radicals, as useful for the creation of nanoscopic molecular spintronic devices, finding that it does not correspond to standard Mott behavior, as previously postulated. We provide a complete investigation using transport… [Phys. Rev. B 93, 165201] Published Mon Apr 04, 2016
Schlagwort(e):
Semiconductors I: bulk
Print ISSN:
1098-0121
Digitale ISSN:
1095-3795
Thema:
Physik
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