Publication Date:
2012-11-10
Description:
Author(s): P. Laukkanen, M. P. J. Punkkinen, J. Puustinen, H. Levämäki, M. Tuominen, K. Schulte, J. Dahl, J. Lång, H. L. Zhang, M. Kuzmin, K. Palotas, B. Johansson, L. Vitos, M. Guina, and K. Kokko Using first-principles total energy calculations we have found complex defects induced by N incorporation in GaAsN. The formation energy of the Ga interstitial atom is very significantly decreased due to local effects within the defect complex. The stability of the Ga interstitials is further increa... [Phys. Rev. B 86, 195205] Published Fri Nov 09, 2012
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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