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  • American Institute of Physics (AIP)  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Optical properties of pulsed laser deposited bismuth films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7023-7027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bismuth films are grown at room temperature onto Si substrates by pulsed laser deposition (PLD). Some films are deposited by dc sputtering (DCS) for comparison. PLD films are smooth and show micron-sized laminar grains as opposed to DCS films which are rough and show nanometer-sized columnar grains. The optical properties of the films have been studied by means of spectroscopic ellipsometry in the 300–800 nm wavelength interval over a period of six months. The results show that the refractive index of PLD Bi films is independent of the film thickness, thus providing reliable data of the optical constants of Bi films. In addition, it is shown that PLD films exhibit an improved stability to oxidation probably related to their favorable microstructural properties. The thickness dependence of the refractive index in DCS films is related to their surface roughness, the results being improved by pulsed laser melting of these films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363775
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  • 2
    Electronic Resource
    Electronic Resource
    The diffusion process of metastable carriers in bismuth (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6358-6360 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion process of electrons and holes which have been pumped into a metastable band in bismuth films by a 1.064-μm laser pulse is considered in the calculation of the induced thermal gradient. The fit between the temporal evolution of this calculated thermal gradient and that of the thermoelectric response of films to the laser excitation allows us to estimate an upper limit of the ambipolar diffusion coefficient of metastable carriers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359107
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  • 3
    Electronic Resource
    Electronic Resource
    Refractive index of Ag nanocrystals composite films in the neighborhood of the surface plasmon resonance (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1536-1541 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocomposite thin films formed by Ag nanocrystals embedded in an amorphous aluminum oxide (Al2O3) host were prepared by alternating-target pulsed laser deposition. Spectroscopic ellipsometry was used to determine the effective refractive index (n=n+ik). When the Ag volume fraction is over 2%, the linear optical properties of the nanocomposite films differ from those of the pure dielectric host. The extinction coefficient shows a maximum around 435 nm that is related to the surface plasmon resonance. Near this wavelength, the real part of the refractive index undergoes anomalous dispersion, leading to a significant increase of the n value of the composite compared to that of the matrix. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427404
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  • 4
    Electronic Resource
    Electronic Resource
    A method to measure weak short-lived photoconductivity induced by laser excitation in low-resistance samples (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2062-2064 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The present article describes a simple four point-probe method to measure weak and short-lived photoconductivity in low-resistance samples. The method is based on biasing the sample with a short and intense pulse of current which permits a high sensitivity of measurement. This pulsed and synchronized bias current is induced in a Rogowski coil by the laser flash-lamp current. We also analyze the performance and inherent limitations of this system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144813
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  • 5
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometry determination of the refractive index of strained Si1−xGex layers in the near-infrared wavelength range (0.9–1.7 μm) (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3402-3404 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The refractive index of fully strained Si1−xGex layers, with compositions x=0.20, 0.25, 0.30, and 0.33, has been measured using spectroscopic ellipsometry as a function of the wavelength in the 0.9–1.7 μm range. The dependence of the refractive index on the wavelength, for these compositions, is similar to that of crystalline Si. Its value for any wavelength is lower than that of relaxed Si1−xGex of the same composition. The experimental values of the refractive index of the fully strained Si1−xGex were fitted to the expression nSiGe(x,λ)=nSi(λ)+(1.16–0.26 λ)x2. This expression is applicable for wavelengths from 0.9 to 1.7 μm and compositions x≤0.33. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114907
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  • 6
    Electronic Resource
    Electronic Resource
    Anomalous photoresponse of thick bismuth films to pulsed laser excitation (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3658-3660 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current-biased 4.3-μm Bi films give an anomalous photoresponse when they are illuminated with 20-ns 1.064-μm laser pulses. The films resistivity decreases during irradiation. This observation excludes a simple bolometric process as a cause for the induced transients and supports the prediction of a previously reported model which required the optical pumping of carriers into a metastable band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111172
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