Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
66 (1989), S. 5637-5639
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A novel type of trapezoidal channeled substrate inner stripe diode laser array grown by single-step liquid-phase epitaxy was designed and fabricated. A six-element array with evanescent wave coupling, as well as leaky wave coupling, shows a continuous-wave threshold current of 170 mA and a pulsed peak power over 675 mW per facet without a coating. A clean single-lobe far-field pattern of beam width 2.4° is obtained.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343674
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