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  • American Institute of Physics (AIP)  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition and deep level analyses of 4H-SiC(112¯0) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6105-6109 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Specular 4H-SiC layers have been homoepitaxially grown on 4H-SiC(112¯0), parallel to the c axis (〈0001〉), by chemical vapor deposition at 1500 °C. An x-ray diffraction analysis has revealed that a lattice-mismatch strain between n− epilayers and n+ substrates could be minimized by introducing n-type buffer layers. The donor concentration of unintentionally doped epilayers could be reduced down to 1×1014 cm−3 under a C-rich growth condition. Through isothermal capacitance transient spectroscopy measurements, three acceptor-like traps with activation energies of 0.27, 0.32, and 0.66 eV have been detected with a total trap concentration as low as 3.8×1012 cm−3. The capture cross section of the deepest trap, the Z1 center, at high temperatures has been determined. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368863
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  • 2
    Electronic Resource
    Electronic Resource
    (InAs)3(GaAs)1 superlattice channel field-effect transistor grown by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 894-895 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A metal-insulator-semiconductor field-effect transistor (MISFET) using the InAs-GaAs superlattice as a channel layer has been successfully demonstrated for the first time. Device structure was grown by molecular beam epitaxy. The MISFET with 1.0 μm gate length exhibits a maximum external dc transconductance of 212 mS/mm at Vds =3.0 V and Vg =−1.5 V. This value is high among 1.0 μm gate length devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101618
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  • 3
    Electronic Resource
    Electronic Resource
    Shallow states at SiO2/4H-SiC interface on (112¯0) and (0001) faces (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 301-303 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallow interface states at SiO2/4H-SiC were examined on (112¯0) and (0001) faces using metal–oxide–semiconductor (MOS) capacitors. The MOS capacitors were fabricated by wet oxidation on both faces to investigate the difference in the energy distribution of interface state density. The parallel conductance as a function of frequency was measured at room temperature, and high-frequency capacitance (C)–voltage (V) curves were measured both at room temperature and 100 K. By the conductance method, the interface state density on (112¯0) was revealed smaller than on (0001) at shallow energies, while at deeper energies the relation changes to opposite situation. High-frequency C–V curves at 100 K show a large positive flatband voltage shift and a large injection-type hysteresis on (0001) samples, while those were small on (112¯0), indicating another evidence of smaller interface state density near the conduction band edge on (112¯0). © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492313
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  • 4
    Electronic Resource
    Electronic Resource
    A cause for highly improved channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors on the (112¯0) face (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 374-376 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 4H-silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors fabricated on both (112¯0) and (0001) faces were characterized at various temperatures. From the temperature dependence of channel mobility, carrier transport in the inversion layer at the SiO2/4H-SiC(112¯0) interface was found to be affected by phonon scattering (μ0∼T−2.2), while that at the SiO2/4H-SiC(0001) interface was thermally activated (μ0∼T2.6) due to the decrease of Coulomb scattering by emission of electrons from acceptor-like interface states. From the temperature dependence of threshold voltage, the density of acceptor-like interface states near the conduction band edge seems to be low at the SiO2/4H-SiC(112¯0) interface, but quite high (〉1013 cm−2 eV−1) at the SiO2/4H-SiC(0001) interface. The low density of acceptor-like interface states near the conduction band edge on the (112¯0) face should be the primary cause for the high inversion-channel mobility. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1340861
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