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  • 1
    Publication Date: 2015-01-13
    Description: This paper presents a microfluidic device that can automatically transport a droplet on a plastic plate. This device consists of a Cyclo Olefin Polymer (COP) plate and a SiO 2 membrane and has wettability gradient surface. Lithographic patterns of hydrophilic SiO 2 permitted wettability modification of a hydrophobic COP surface. A series of alternate hydrophobic and hydrophilic wedge-shaped patterns generated a required gradient in wettability. When we dropped a droplet on the wettability gradient surface, it moved along the wettability gradient due to an imbalance between surface tension forces acting on the opposite sides of the droplet edge. The droplet transportation test was carried out using water of 5 μ l. As a result, we succeeded in automatically transporting the droplet on the SiO 2 /COP wettability gradient pattern. We also carried out droplet transportation in an enclosed microchannel for preventing droplet evaporation using DI (Deionized) water of 5 μ l. In this case, the droplet was automatically transported by forming the wettability gradient pattern at the top and bottom in an enclosed microchannel without evaporation.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 2
    Publication Date: 2014-06-25
    Description: Here, we sought to develop a cell culture surface conversion technique that would not damage living cells. An alginate thin film, formed on a glass plate by spin coating of sodium alginate solution and dipping into calcium chloride solution, was used to inhibit adhesion of cells. The film could be removed by ethylenediaminetetraacetate (EDTA) at any time during cell culture, permitting observation of cellular responses to conversion of the culture surface in real time. Additionally, we demonstrated the validity of the alginate thin film coating method and the performance of the film. The thickness of the alginate thin film was controlled by varying the rotation speed during spin coating. Moreover, the alginate thin film completely inhibited the adhesion of cultured cells to the culture surface, irrespective of the thickness of the film. When the alginate thin film was removed from the culture surface by EDTA, the cultured cells adhered to the culture surface, and their morphology changed. Finally, we achieved effective differentiation of C2C12 myoblasts into myotube cells by cell culture on the convertible culture surface, demonstrating the utility of our novel technique.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 3
    Publication Date: 2016-09-30
    Description: The formation of magnetic and spintronic devices using two-dimensional (2D) atom-thin layers has attracted attention. Ferromagnetisms (FMs) arising from zigzag-type atomic structure of edges of 2D atom-thin materials have been experimentally observed in graphene nanoribbons, hydrogen (H)-terminated graphene nanomeshes (NMs), and few-layer oxygen (O)-terminated black phosphorus NMs. Herein, we report room-temperature edge FM in few-layer hexagonal boron-nitride (hBN) NMs. O-terminated hBNNMs annealed at 500 °C show the largest FM, while it completely disappears in H-terminated hBNNMs. When hBNNMs are annealed at other temperatures, amplitude of the FM significantly decreases. These are highly in contrast to the case of graphene NMs but similar to the cases of black phosphorus NM and suggest that the hybridization of the O atoms with B(N) dangling bonds of zigzag pore edges, formed at the 500 °C annealing, strongly contribute to this edge FM. Room-temperature FM realizable only by exposing hBNNMs into air opens the way for high-efficiency 2D flexible magnetic and spintronic devices without the use of rare magnetic elements.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4277-4285 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth process in the initial deposition stage of Ge films on an Si(001) surface where tellurium is adsorbed was investigated. The growth mode of these films was found to change to layered growth on a Te/Si(001) surface, i.e., Te atoms were observed on the surface of the Ge films as a result of successive site exchanges between the Te and Ge atoms. Thus, Te is believed to act as a surfactant to grow Ge in a layer-by-layer mode on a Si substrate. The growth process was observed in situ by reflection high-energy electron diffraction and low-energy electron diffraction, with the microstructure of Ge films being examined in detail using a transmission electron microscope.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4592-4597 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe (111)B layers were grown on oriented and misoriented GaAs (100) substrates by hot-wall epitaxy. The crystallinity of the layers was examined by x-ray diffraction. The strain relaxation was investigated by x-ray diffraction and optical reflectance spectra. (1) For the layers on oriented substrates, it is found that the strain of the layer is relaxed as the layer thickness increases, but additional strain, which is probably due to the formation of twinned domains, remains and is hardly relaxed. (2) Layers on misoriented substrates are twin free with good crystalline quality. Strain is relaxed as the layer thickness increases. The residual strain of layers thicker than 10 μm is for the most part due to the difference of thermal expansion coefficients between CdTe and GaAs.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6472-6477 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe layers were grown on oriented CdTe(111)B substrates by hot-wall epitaxy. The crystallinity of the layers was examined by etch-pit observation, x-ray rocking curves, and photoluminescence spectra. High-quality CdTe(111)B homoepitaxial layers without twinned domains are obtained. It is found that the CdTe(111)B homoepitaxial layers are strained. The crystallinity and amount of strain of the layers depend on the preheating temperature of substrates before the growth. For comparison, CdTe(100) homoepitaxial layers were grown and characterized.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2190-2192 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ferromagnetic MnSb layers were grown on GaAs(100) substrates by hot-wall epitaxy. Structural and magnetic properties of the MnSb layers are examined by reflection high-energy electron diffraction and vibrating sample magnetometry, respectively. It is found that MnSb with a NiAs-type crystalline structure can be grown epitaxially on GaAs(100) with inclination of the c axis of MnSb towards GaAs[011] and [011] direction by 53°. This inclination growth causes in-plane anisotropy of the magnetic property of the layer. The simple growth technique of the ferromagnetic layers on compound semiconductor substrates indicates high potentiality of development in magnetic material—III-V semiconductor hybrid devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2073-2077 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe(100) layers of the thickness range from 0.7 to 15 μm were grown on GaAs(100) substrates by hot-wall epitaxy. The crystallinity of the layer was examined by reflection high-energy electron diffraction, x-ray rocking curve, and photoluminescence. The lattice relaxation were investigated by x-ray analysis and optical reflectance spectra. CdTe layers with thickness up to 15 μm were under compressive biaxial stress. In addition to the split exciton lines (n=1), the emission from excited states (n=2) was observed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 665-666 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN films were prepared by hot wall epitaxy on sapphire (0001) substrates from Ga and NH3 sources. Growth characteristics of the GaN films were investigated from reflection high energy electron diffraction (RHEED) and x-ray diffraction measurements, and effects of initial layers on the film growth are discussed. High quality films with streak RHEED patterns were obtained when the films were grown on a GaN initial layer prepared by Ga predeposition and its nitridation on surface nitrided sapphire substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6860-6864 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain relaxation of CdTe(100) layers grown on GaAs(100) substrates by hot-wall epitaxy was investigated by measurement of optical properties, x-ray analysis, and transmission electron microscopy. It is considered from transmission electron microscopy observation that relaxation of most of the strain due to lattice mismatch occurred at the interface. However, a small amount of strain, of the order of 10−3, remained in layers thicker than 0.7 μm, and it was relaxed as the layer thickness increased. The residual strain of 4×10−4, which exists in layers thicker than 10 μm, was due to the difference between the thermal expansion coefficients of the layer and the substrate. Moreover, for layers thicker than 17 μm, split ground (n=1) and first excited (n=2) free-exciton states due to internal strain have for the first time been observed by photoluminescence and reflectance spectroscopy. The results show that CdTe layers with excellent crystallinity and homogeneity in strain are obtained.
    Type of Medium: Electronic Resource
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